| 摘要 |
PURPOSE: A light emitting device is provided to improve luminous intensity and an operation voltage by controlling the composition of Al on an electron blocking layer. CONSTITUTION: An active layer (114) is formed on a first conductive semiconductor layer. The active layer includes a quantum well (114a) and a quantum wall (114b). An electron blocking layer (126) includes a first electron blocking layer (126a), a second electron blocking layer (126b), and a third electron blocking layer (126c). A second conductive semiconductor layer is formed on the electron blocking layer. The energy band gap of the first electron blocking layer is gradually decreased from the active layer to the second conductive semiconductor layer. The energy band gap of the second electron blocking layer is gradually increased.
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