| 摘要 |
<p>To reduce the degradation in the conversion efficiency of crystalline silicon solar cells due to the LID effect, one or more steps consisting of the controlled introduction of gaps into the silicon are applied, wherein said introduction is carried out by means of one or more steps selected from the following steps: silicidation, nitridation, ion implantation, laser irradiation, the application of mechanical stresses to a surface of the silicon substrate by bending, in combination with a temperature that promotes the formation of gaps. Said gaps make it possible to reduce the interstitial oxygen content by means of an effect of the diffusion of the VO complexes and the precipitation of the oxygen. The introduction of the gaps also has the effect of reducing the self-interstitial content, and thus of limiting the formation of interstitial boron. The LID phenomena caused by the activation of the BiOi2 complexes are thus limited. The invention can be used particularly in monocrystalline or polycrystalline silicon solar cells having a high boron and oxygen concentration.</p> |
