| 发明名称 |
Power Semiconductor Device with Reduced Contact Resistance |
| 摘要 |
A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.
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| 申请公布号 |
US2013175690(A1) |
申请公布日期 |
2013.07.11 |
| 申请号 |
US201313780161 |
申请日期 |
2013.02.28 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION;INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
FUCHS SVEN;PAVIER MARK |
| 分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
| 代理机构 |
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