发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY, AND ELECTRONIC APPARATUS |
摘要 |
A thin film transistor includes: a gate electrode, a source electrode, and a drain electrode; an oxide semiconductor layer provided on one side of the gate electrode with an insulating film in between, the oxide semiconductor layer being provided in a region not facing the source electrode and the drain electrode and being electrically connected to the source electrode and the drain electrode; and a low resistance oxide layer provided in a region facing the source electrode and in a region facing the drain electrode, the regions being adjacent to the oxide semiconductor layer, and the low resistance oxide layer having an electric resistivity lower than an electric resistivity of the oxide semiconductor layer.
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申请公布号 |
US2013175522(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201313732948 |
申请日期 |
2013.01.02 |
申请人 |
SONY CORPORATION;SONY CORPORATION |
发明人 |
SHIMAYAMA TSUTOMU;FUJII NOBUTOSHI;FUJIMORI TAKASHIGE |
分类号 |
H01L29/786;H01L27/15;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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