| 摘要 |
It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).
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