| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which improves yield of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: a step of forming a conductive film 41 on a semiconductor substrate 1; a step of patterning the conductive film 41 in a memory region III to form a first gate electrode 41a; a step of forming mask films 63 on the conductive film 41 in a logic region II and on the first gate electrode 41a, respectively, after forming the first gate electrode 41a; a step of removing the mask film 63 in the logic region II; a step of forming first resist films 67 on the mask film 63 remaining in the memory region III and on the conductive film 41 remaining in the logic region II, respectively; and a step of etching the conductive film 41 by using the first resist film 67 as a mask to form second gate electrodes 41d-41h in the logic region II. |
