| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of bit errors of a flash memory.SOLUTION: When an error correction failure signal is input from a decoder (step S100), if a low-threshold data number Nw read from a flash memory 22 is less than a low-threshold data number Ni when the data is written in the flash memory 22, a memory controller executes a high bit line voltage application control (steps S120-S140) and, if the low-threshold data number Nw read from the flash memory 22 exceeds the low-threshold data number Ni when the data is written in the flash memory 22, repeatedly executes a readout On voltage application control (steps, S120, S130 and S150). This configuration can reduce the number of bit errors of the flash memory 22. |
