| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for improving linearity of MOSFET using an accumulated charge sink (ACS).SOLUTION: The method and apparatus is adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An ACS, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the SOI MOSFET, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. |
