PHOTORESIST PATTERN TRIMMING METHODS

摘要

PURPOSE: A method for trimming a photoresist pattern is provided to improve a processing window for forming the same pattern as a post and a line which are separated. CONSTITUTION: A semiconductor substrate (100) including one or more layers (102) to be patterned is provided. A hard mask layer (103) and/or a base antireflective coating layer (104) are formed on one or more layers. A photoresist pattern including a matrix polymer is formed on the base antireflective coating layer. A photoresist trimming composition is coated on the photoresist pattern. The polarity of the matrix polymer is changed on the surface of the photoresist pattern by heating the semiconductor substrate. The surface of the photoresist pattern is removed by developing solutions in contact with the photoresist pattern.