| 摘要 |
PURPOSE: A substrate processing device using inductively coupled plasma is provided to improve the uniformity of processing gas supplied to a processing chamber and increase the uniformity of plasma in the processing chamber. CONSTITUTION: A processing gas supply unit includes a first processing gas supply unit (62) formed in the center of an upper lid (10) and a second processing gas supply unit (63) formed nearby the first processing gas supply unit. The first processing gas supply unit is connected to a first processing gas supply pipe (68), and the second processing gas supply unit is connected to a second processing gas supply pipe (69). The first processing gas supply unit includes at least one wing part and a central part combined with one end of the wing part. The second processing gas supply unit includes at least one wing part and a central part combined with one end of the wing part. |
