发明名称 |
Method of and apparatus for active energy assist baking |
摘要 |
A method of and apparatus for forming interconnects on a substrate includes etching patterns in ultra-low k dielectric and removing moisture from the ultra-low k dielectric using active energy assist baking. During active energy assist baking, the ultra-low k dielectric is heated and exposed to light having only wavelengths greater than 400 nm for about 1 to about 20 minutes at a temperature of about 300 to about 400 degrees Celsius. The active energy assist baking is performed after wet-cleaning or after chemical mechanical polishing, or both.
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申请公布号 |
US8481412(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US20100893399 |
申请日期 |
2010.09.29 |
申请人 |
KO CHUNG-CHI;CHOU CHIA CHENG;LIN KENG-CHU;LIOU JOUNG-WEI;JENG SHWANG-MING;CHEN MEI-LING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHUNG-CHI;CHOU CHIA CHENG;LIN KENG-CHU;LIOU JOUNG-WEI;JENG SHWANG-MING;CHEN MEI-LING |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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