| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a method for fabricating the same are provided to reduce the channel resistance of a pass transistor by forming a metallic material layer which is in contact with the channel layer of the pass transistor. CONSTITUTION: A pass gate electrode is formed on the lower part of a gate structure. A sub channel hole (H2) is formed in the pass gate electrode. A pair of main channel holes (H1) is connected to the sub channel hole through the gate structure. A channel layer (170) is formed along the main channel holes and the inner wall of the sub channel hole. A metallic material layer is in contact with the channel layer.</p> |
