APPARATUS AND METHOD FOR DEPOSITION

摘要

PURPOSE: A deposition apparatus and a deposition method are provided to manufacture a high quality silicon carbide epi wafer by preventing the temperature difference between the edge part of a wafer and the inner part. CONSTITUTION: A first heating member (30) is located on the upper surface of a chamber (10). A second heating member (40) is located under the lower surface of the chamber. First and second heating members include spiral shapes. The second heating member heats the edge part of a wafer. A susceptor (20) is located in the chamber.