| 摘要 |
PROBLEM TO BE SOLVED: To achieve a gate stock having a direct junction structure of a high dielectric constant insulation film and silicon capable of obtaining a low EOT in which a high temperature heat treatment process needed to improve an electric characteristic of a semiconductor device can be carried out, in order to achieve further micro-fabrication according to a scaling rule of a semiconductor device.SOLUTION: A semiconductor device 1 comprises: a Si substrate 2; a gate insulation film 3 formed on the Si substrate 2 by using a rare earth oxide; a first gate electrode 4 formed on the gate insulation film 3 by using any one of tungsten (W), tantalum (Ta) or molybdenum (Mo); and a second gate electrode 5 formed on the first gate electrode 4 by using tantalum nitride (TaN). Preferably, the gate insulation film 3, the first gate electrode 4 and the second gate electrode 5 are formed in a non-oxygen state, and after they have been formed, heat treatment in the non-oxygen state is carried out. |
