| 摘要 |
PROBLEM TO BE SOLVED: To process a rear face while protecting an element formation face without limiting a temperature of a semiconductor substrate during a rear face processing step, in a semiconductor device manufacturing method having the rear face processing step.SOLUTION: The semiconductor device manufacturing method includes: a surface processing step of forming at least one part of a semiconductor element on one side of a semiconductor substrate; and a rear face processing step of processing a rear face opposed to one face after the surface processing step. The method also includes: an inorganic film formation step of forming an inorganic protective film across an entire face of one face after the surface processing step and before the rear face processing step; an organic film formation step for forming an organic protective film across an entire face of the inorganic protective film and then patterning the organic protective film after the inorganic film formation step and before the rear face processing step; and an inorganic film removing step of removing one part of the inorganic protective film with the organic protective film as a mask after the rear face processing step. |
