发明名称 |
METHOD FOR PRODUCING SINGLE CRYSTAL SILICON |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon, whereby the occurrence of dislocation in the single crystal silicon can be reduced when growing the single crystal silicon by a multi-pulling method whereby a plurality of single crystal silicons is pulled up from a raw material melt in the same crucible.SOLUTION: The method for producing single crystal silicon involves producing the single crystal silicon 1 by a multi-pulling method whereby a plurality of single crystal silicons 1 is pulled up from the raw material melt 7 in the same crucible 8 in a chamber by the Czochralski method. The method comprises a step of growing the single crystal silicon 1 in a magnetic field, wherein the amount of barium added to form a layer on an inner wall of the large-diameter crucible 8 is controlled so that it falls within a prescribed range. |
申请公布号 |
JP2013133244(A) |
申请公布日期 |
2013.07.08 |
申请号 |
JP20110283331 |
申请日期 |
2011.12.26 |
申请人 |
SILTRONIC AG |
发明人 |
KATO HIDEO;KUBU SHINICHI;OKUBO MASAMICHI |
分类号 |
C30B29/06;C03B20/00;C30B15/10 |
主分类号 |
C30B29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|