METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR AND LASER ANNEAL APPARATUS

摘要

When crystallizing a silicon thin film by irradiation with a pulse laser, a uniform crystallization is achieved. A manufacturing apparatus is provided with a laser oscillator for outputting a pulse laser, an optical system for guiding the pulse laser to a non-crystalline semiconductor, and a moving apparatus for causing the non-crystalline semiconductor to a relative movement to scan and irradiate the non-crystalline semiconductor with the pulse laser. In the laser oscillator, the output pulse laser has a plurality of peak groups in one pulse in a temporal intensity change, and out of the peak groups, a first peak group having the maximum height and a second peak group which succeedingly appears satisfy a relationship of (second peak group)/(first peak group) = 0.35 in a peak intensity value. A crystalline semiconductor having uniform characteristics is obtained by irradiating the non-crystalline semiconductor with the pulse laser.