| 摘要 |
<p>PURPOSE: An oxide semiconductor thin film transistor and a manufacturing method thereof are provided to improve electron mobility by reducing contact resistance between an active layer and source and drain electrodes. CONSTITUTION: A gate electrode (15) is formed on a substrate (11). A gate insulation layer (18) is formed on the front surface of the substrate including the gate electrode. An active layer (24) formed with an oxide semiconductor is formed on the gate insulation layer which is located on the upper side of the gate electrode. A source electrode (36) and a drain electrode (38) made of oxide metal are formed on both sides of the active layer. A metal wiring layer (35) is formed on the upper side or the lower side of the source electrode.</p> |
