| 摘要 |
<p>Disclosed is a method for manufacturing a solar cell, which is provided with a substrate (1) that is composed of a p-type crystalline silicon, an n-type diffusion layer (3) that is formed on the substrate front surface on the light receiving side, and a passivation film (9) that is formed on the substrate rear surface on the reverse side of the substrate front surface on the light receiving side. The method has, in the following order, a passivation film forming step of forming the passivation film on the substrate rear surface, and an n-type diffusion layer forming step of forming the n-type diffusion layer on the substrate front surface. Consequently, since the passivation film serves as a mask at the time of forming the n-type diffusion layer, and a step of removing the n-type diffusion layer on the substrate rear surface after the n-type diffusion layer forming step is not necessary, the number of steps can be reduced.</p> |
