| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate, which can sufficiently identify a defect position localized in the semiconductor substrate and evaluate the semiconductor device.SOLUTION: An evaluation method of a semiconductor substrate comprises: forming PN junction on a surface of the semiconductor substrate; measuring a leakage current at the PN junction; selecting a cell in which a defect is presumed to exist on the basis of the measurement result of the leakage current; emitting electron beams to scan the selected cell; creating a distribution of emission intensity with respect to each wavelength of detected light emission; and identifying an in-plane position of a defect existing in the cell on the basis of the created distribution of emission intensity to evaluate the defect. |
