| 摘要 |
A super-junction of a semiconductor device is formed by forming a polysilicon layer on a semiconductor substrate; patterning the polysilicon layer to form pillars for a super-junction structure; and growing an epitaxial layer between the pillars to form a continuous PN junction structure of the super-junction, which forms the super-junction structure more accurately. It is therefore possible to simplify the process for forming the super-junction without using a repetitive ion implantation process a trench process, thereby increasing productivity and device reliability.
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