| 摘要 |
PURPOSE: A light emitting device is provided to prevent damage due to an ESD voltage by forming a capacitor with a dielectric layer including an overlap area of 1.6 to 6.4 mm^2 with at least one of a first electrode or a second electrode. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer (122), an active layer, and a second conductive semiconductor layer (124). A first electrode includes a first electrode finger (134) and a first electrode pad (132) arranged in a first region. A second electrode includes a second electrode pad (142) and a second electrode finger (144). A dielectric layer (150) is arranged between the first and second electrode fingers in a capacitor region. An overlap area of the dielectric layer and the first and second electrode fingers is 2 to 10 % of the second semiconductor layer.
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