发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION AND OPERATION |
摘要 |
A non-volatile semiconductor memory device comprises a semiconductor substrate and a plurality of gate structures formed on a cell region of the semiconductor substrate. The plurality of gate structures include: a first select-gate structure and a second select-gate structure disposed on the cell region, the first select-gate structure and the second select-gate structure spaced apart from each other, and a plurality of cell gate structures disposed between the first select-gate structure and the second select-gate structure. At least one of the select-gate structures comprises plural select gates.
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申请公布号 |
US2013170302(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201113340577 |
申请日期 |
2011.12.29 |
申请人 |
HONG SUNG-MIN;KIM TAE-KYUNG;CHOI WOOSUNG |
发明人 |
HONG SUNG-MIN;KIM TAE-KYUNG;CHOI WOOSUNG |
分类号 |
G11C16/04;H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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