CMP SLURRY COMPOSITION AND POLISHING METHOD USING SAME

摘要

A CMP slurry composition of the present invention is characterized by comprising: cerium oxide particles; a polishing performance enhancer; and a pH adjuster, wherein the full width at half maximum (w) in the secondary particle size distribution of the cerium oxide particles is approximately 30 nm or less, and the ratio of particles having a semi-major axis of at least 1 µm to particles having a semi-major axis of at least 0.6 µm is approximately 1% or less.