发明名称 SUBSTRATE PROCESS METHOD
摘要 PURPOSE: A substrate processing method is provided to improve process efficiency and productivity by reducing the quantity of used process gas materials. CONSTITUTION: A substrate is received on a substrate supporter inside a chamber (S111). Process gases are supplied to the chamber (S112). A first stabilization process is performed by corresponding to preset first stabilization time information (S113). A second stabilization process to automatically control the opening of a valve with a feedback method is performed (S114). A thin film is deposited on the substrate (S115). The substrate is outputted to the outside (S116). [Reference numerals] (S111) Substrate is received; (S112) Fluid is supplied to a chamber; (S113) First stabilization; (S114) Second stabilization (automatic control); (S115) Process is performed; (S116) Substrate is discharged
申请公布号 KR20130074417(A) 申请公布日期 2013.07.04
申请号 KR20110142476 申请日期 2011.12.26
申请人 WONIK IPS CO., LTD. 发明人 LEE, SUNG BIN;KO, HYUN CHANG;AHN, CHI WON;JEON, YONG BAEK
分类号 H01L21/205 主分类号 H01L21/205
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