发明名称 METHOD FOR FORMING MULTI-COMPONENT LAYER, METHOD FOR FORMING MULTI-COMPONENT DIELECTRIC LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant.
申请公布号 US2013171797(A1) 申请公布日期 2013.07.04
申请号 US201213463215 申请日期 2012.05.03
申请人 PARK KYUNG-WOONG;LEE KEE-JEUNG;KOO JAE-HYOUNG;DO KWAN-WOO;AHN JI-HOON;PARK WOO-YOUNG 发明人 PARK KYUNG-WOONG;LEE KEE-JEUNG;KOO JAE-HYOUNG;DO KWAN-WOO;AHN JI-HOON;PARK WOO-YOUNG
分类号 H01L21/31;H01L21/02;H01L21/336 主分类号 H01L21/31
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