发明名称 |
METHOD FOR FORMING MULTI-COMPONENT LAYER, METHOD FOR FORMING MULTI-COMPONENT DIELECTRIC LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant.
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申请公布号 |
US2013171797(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213463215 |
申请日期 |
2012.05.03 |
申请人 |
PARK KYUNG-WOONG;LEE KEE-JEUNG;KOO JAE-HYOUNG;DO KWAN-WOO;AHN JI-HOON;PARK WOO-YOUNG |
发明人 |
PARK KYUNG-WOONG;LEE KEE-JEUNG;KOO JAE-HYOUNG;DO KWAN-WOO;AHN JI-HOON;PARK WOO-YOUNG |
分类号 |
H01L21/31;H01L21/02;H01L21/336 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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