发明名称 Semiconductor device
摘要 One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.
申请公布号 US2006220213(A1) 申请公布日期 2006.10.05
申请号 US20050220788 申请日期 2005.09.08
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KONDOU MAKOTO;ARAI KIYOSHI
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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