发明名称 PHOTOELECTRIC CONVERSION SUBSTRATE, RADIATION DETECTOR, RADIATION IMAGE CAPTURING DEVICE, AND MANUFACTURING METHOD OF RADIATION DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion substrate capable of preventing electrostatic destruction of a photoelectric conversion element, and to provide a radiation detector, a radiation image capturing device, and a manufacturing method of a radiation detector. <P>SOLUTION: Top surfaces of a TFT switch 4 and a sensor 103 formed on a substrate 1 are flattened by a planarization layer 18, and a conductive film 30 having an antistatic function is formed on the substantially whole surface of the planarization layer 18. The conductive film 30 is formed integrally with ground wiring 32 and a ground connection terminal 34, and configured to be connected with the ground via the ground connection terminal 34. Furthermore, a scintillator 70 is formed on a photoelectric conversion substrate 60 (conductive film 30), and the scintillator 70 includes a non-columnar portion 71 and a columnar portion 72, in this order, from the photoelectric conversion substrate 60. The photoelectric conversion substrate 60 is subjected to surface treatment while connecting the conductive film 30 with the ground via the ground connection terminal 34. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013046043(A) 申请公布日期 2013.03.04
申请号 JP20110185238 申请日期 2011.08.26
申请人 FUJIFILM CORP 发明人 OTA YASUYOSHI;SATO KEIICHIRO;NISHINO NAOYUKI;NAKATSUGAWA HARUYASU
分类号 H01L31/10;G01T1/20;H01L27/144;H01L27/146;H01L31/09;H04N5/32;H04N5/369 主分类号 H01L31/10
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