| 摘要 |
PROBLEM TO BE SOLVED: To ensure a region for wiring in a semiconductor device having a structure in which the wiring is performed between a plurality of through electrodes.SOLUTION: In a semiconductor device in which a plurality of core chips (memory cell arrays) are stacked, the core chips and interface chips are electrically connected by a plurality of through electrodes 110. Signal lines 150 and power-supply lines 154 are provided between the through electrodes 110. A pad PP of a power-supply through electrode 110P is connected to the adjacent power-supply line 154 in a wiring layer. The width of the pad PP in the extending direction of the power-supply lines 154 is larger than the width in the direction crossing to the extending direction. |
