发明名称 |
Methods for Semiconductor Regrowth |
摘要 |
A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
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申请公布号 |
US2013171792(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213414357 |
申请日期 |
2012.03.07 |
申请人 |
WAN CHENG-TIEN;LIN YOU-RU;LEE YI-JING;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WAN CHENG-TIEN;LIN YOU-RU;LEE YI-JING;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L21/762;H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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