发明名称 Methods for Semiconductor Regrowth
摘要 A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
申请公布号 US2013171792(A1) 申请公布日期 2013.07.04
申请号 US201213414357 申请日期 2012.03.07
申请人 WAN CHENG-TIEN;LIN YOU-RU;LEE YI-JING;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 WAN CHENG-TIEN;LIN YOU-RU;LEE YI-JING;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN
分类号 H01L21/762;H01L21/336 主分类号 H01L21/762
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