| 摘要 |
A photovoltaic conversion device includes a light absorbing layer all or part of which includes a Cu2Ge1-xSnxS3-based compound (0<x<1). A light absorbing layer with few pinholes is produced as follows: a Cu-based precursor is first prepared, and a vapor containing S and Ge is then generated from an S source and a Ge source, and finally the vapor is reacted with the Cu-based precursor. Preferably, S powder is used as the S source, and powder or a thin film of one or more materials selected from Ge, GeS, and GeS2 is used as the Ge source. |
