发明名称 WRITE MECHANISM FOR STORAGE CLASS MEMORY
摘要 Storage class memory may be used in an architecture to achieve high performance, high reliability, high compatibility. In some embodiments, reads may be handled in a conventional way used in a memory based model. However writes do not use a memory based model but instead correspond to a storage based model. The hybrid nature can be achieved by setting the storage class memory to be write protected so that all writes must go through a software based block device interface. In some embodiments, the software based block device interface prevents erroneous writes to the storage class memory.
申请公布号 WO2013101179(A1) 申请公布日期 2013.07.04
申请号 WO2011US68086 申请日期 2011.12.30
申请人 INTEL CORPORATION;CHEN, FENG;MESNIER, MICHAEL P. 发明人 CHEN, FENG;MESNIER, MICHAEL P.
分类号 G06F12/00;G06F9/06;G06F12/16;G06F13/16 主分类号 G06F12/00
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