发明名称 |
WRITE MECHANISM FOR STORAGE CLASS MEMORY |
摘要 |
Storage class memory may be used in an architecture to achieve high performance, high reliability, high compatibility. In some embodiments, reads may be handled in a conventional way used in a memory based model. However writes do not use a memory based model but instead correspond to a storage based model. The hybrid nature can be achieved by setting the storage class memory to be write protected so that all writes must go through a software based block device interface. In some embodiments, the software based block device interface prevents erroneous writes to the storage class memory. |
申请公布号 |
WO2013101179(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
WO2011US68086 |
申请日期 |
2011.12.30 |
申请人 |
INTEL CORPORATION;CHEN, FENG;MESNIER, MICHAEL P. |
发明人 |
CHEN, FENG;MESNIER, MICHAEL P. |
分类号 |
G06F12/00;G06F9/06;G06F12/16;G06F13/16 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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