| 摘要 |
PURPOSE: A semiconductor device is provided to accurately measure the temperature of each layer structure by including temperature voltage with a voltage level being changed by the temperature in each layer structure. CONSTITUTION: A first temperature voltage generating unit (110) generates a first temperature voltage and a second temperature voltage, whose voltage level variations are different from each other by temperature change. A first temperature information determination unit (120) generates first temperature information in response to a level difference between the first and the second temperature voltage. A second temperature voltage generating unit (210) generates a third temperature voltage and a fourth temperature voltage, whose voltage level variations are different from each other when a predetermined time passes after the first and the second temperature voltage are generated from a first structure. A second temperature information determination unit (220) generates second temperature information in response to a level difference of the third and the fourth temperature voltage. [Reference numerals] (110) First temperature voltage generating unit; (120) First temperature information determination unit; (210) Second temperature voltage generating unit; (220) Second temperature information determination unit; (310) Third temperature voltage generating unit; (320) Third temperature information determination unit
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