发明名称 Burst termination control circuit and semiconductor memory using the same
摘要 A semiconductor memory device includes a burst termination control unit and a data output control unit. The burst termination control unit generates a termination control signal, a read command, a write command and a mode resister read command. The data output control unit stops a data output operation in response to the termination control signal.
申请公布号 US8477559(B2) 申请公布日期 2013.07.02
申请号 US201213408701 申请日期 2012.02.29
申请人 LEE YIN JAE;HYNIX SEMICONDUCTOR INC. 发明人 LEE YIN JAE
分类号 G11C8/18 主分类号 G11C8/18
代理机构 代理人
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