发明名称 |
High performance dielectric stack for DRAM capacitor |
摘要 |
A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.
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申请公布号 |
US8476141(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201313737785 |
申请日期 |
2013.01.09 |
申请人 |
INTERMOLECULAR, INC.;ELPIDA MEMORY, INC. |
发明人 |
MALHOTRA SANDRA;CHEN HANHONG;DEWEERD WIM;HORIKAWA MITSUHIRO;KOYANAGI KENICHI;ODE HIROYUKI;RUI XIANGXIN |
分类号 |
H01L21/20;H01L21/31 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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