发明名称 |
Solid state image pickup device and method for manufacturing solid state image pickup device |
摘要 |
A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.
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申请公布号 |
US8476102(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113029046 |
申请日期 |
2011.02.16 |
申请人 |
TAKADA HIDEAKI;KOIZUMI TORU;YAMAZAKI YASUO;RYOKI TATSUYA;CANON KABUSHIKI KAISHA |
发明人 |
TAKADA HIDEAKI;KOIZUMI TORU;YAMAZAKI YASUO;RYOKI TATSUYA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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