发明名称 HIGH INTEGRATED POWER MODULE PACKAGE
摘要 PURPOSE: A highly integrated power module package is provided to prevent the breakdown of a device by using an integrated circuit including a low voltage lockout and an overcurrent protection function. CONSTITUTION: A DBC substrate has a first height. A power device (420) includes a thermistor. A control substrate has a second height higher than the first height. An outer lead (470) is connected to the DBC substrate and the control substrate respectively. A molding material (450) exposes the outer lead.
申请公布号 KR20130073029(A) 申请公布日期 2013.07.02
申请号 KR20130059455 申请日期 2013.05.27
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 LEE, JUN BAE;CHUNG, DAE WOONG;SUH, BUM SEOK
分类号 H01L27/24;H02M7/48 主分类号 H01L27/24
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