| 摘要 |
Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d'(m,n) having the distance information. Since the respective pixels P (m,n) output signals d'(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.
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