| 摘要 |
PURPOSE: A semiconductor memory device and an operation method thereof are provided to improve the reliability of a program operation by preventing the threshold voltages of memory cells, which have completed the program prior to other memory cells, from being lowered below a target level. CONSTITUTION: A control circuit (120) controls a program operation of memory cells connected to selected word lines. Circuit groups (130,140,150,160,170,180) apply a program inhibition voltage to the bit lines connected to the memory cells not to be programed, when programming memory cells connected to the selected word lines according to the control of the control circuit. The circuit groups apply a program allowable voltage to the bit lines connected to the memory cells which have lower threshold voltages than a target level among memory cells to be programed. The circuit groups apply a program maintaining voltage between the program inhibition voltage and the program allowable voltage to the bit lines connected to the memory cells which have completed the program in order to prevent the threshold voltage decrease. [Reference numerals] (110) Memory cell block; (120) Control circuit; (130) Voltage generation circuit; (140) Low decoder; (150) Page buffer group; (160) Column selection circuit; (170) Input and output circuit; (180) Pass/fail determining circuit; (AA) Input and output control signal |
