发明名称 |
Crystal preparing device, crystal preparing method, and crystal |
摘要 |
In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.
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申请公布号 |
US8475593(B2) |
申请公布日期 |
2013.07.02 |
申请号 |
US201113170431 |
申请日期 |
2011.06.28 |
申请人 |
IWATA HIROKAZU;SARAYAMA SEIJI;FUSE AKIHIRO;RICOH COMPANY, LTD. |
发明人 |
IWATA HIROKAZU;SARAYAMA SEIJI;FUSE AKIHIRO |
分类号 |
C30B9/00;C30B11/00 |
主分类号 |
C30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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