发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: Semiconductor device and operation method thereof are provided to speed up input operation by performing buffering operation using reference voltage corresponding to an input signal. CONSTITUTION: A fixing resistor unit (110) generates a plurality of distribution voltage. A variable resistor unit controls a voltage ratio of the plurality of distribution voltage according to a reference voltage range of an input signal. A voltage selection unit (140) selects one of the plurality of distribution voltage and outputs the voltage as reference voltage. A buffering unit (150) buffers the input signal based on the reference voltage and outputs the input signal. [Reference numerals] (110) Fixing resistor unit; (120) First variable resistor unit; (130) Second variable resistor unit; (140) Voltage selection unit; (150) Buffering unit
申请公布号 KR20130071965(A) 申请公布日期 2013.07.01
申请号 KR20110139477 申请日期 2011.12.21
申请人 SK HYNIX INC. 发明人 LEE, JEONG HUN
分类号 G11C7/10;G11C5/14 主分类号 G11C7/10
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