摘要 |
<p>PURPOSE: A method for manufacturing a solar cell is provided to prevent detects due to chlorine on the interface of an intrinsic silicon layer and a second doping silicon layer. CONSTITUTION: A first doping silicon layer is formed by using dichlorosilane gas (S110). A hydrogen plasma process is performed on the first doping silicon layer (S120). An intrinsic silicon layer is formed on the first doping silicon layer by using silane gas (S130). A second doping silicon layer is formed on the intrinsic silicon layer by using the silane gas (S140). A third doping silicon layer is formed on the second doping silicon layer by using the dichlorosilane gas (S150). A transparent electrode layer is formed on the third doping silicon layer (S160). A collection electrode is formed on the transparent electrode layer (S170). [Reference numerals] (AA) Start; (BB) End; (S110) First doping silicon layer is formed by using dichlorosilane gas; (S120) Hydrogen plasma process is performed on the first doping silicon layer; (S130) Intrinsic silicon layer is formed on the first doping silicon layer by using silane gas; (S140) Second doping silicon layer is formed on the intrinsic silicon layer by using the silane; (S150) Third doping silicon layer is formed on the second doping silicon layer by using the dichlorosilane gas; (S160) Transparent electrode layer is formed on the third doping silicon layer; (S170) Collection electrode is formed on the transparent electrode layer</p> |