| 摘要 |
<p>PURPOSE: A semiconductor device is provided to improve electrical properties by forming a contact plug on a bent end of a source or a drain to increase a distance between a gate and the contact plug. CONSTITUTION: A first transistor group includes a first gate (105), a first source (107S), and a first drain (107D). A second transistor group includes a second gate (105'), a second source (107S'), and a second drain (107D'). The first source and the first drain have a shape bent in the opposite direction from the second source and the second drain. The bent part of the first drain is extended between the bent parts of the second gate and the second source. Contact plugs (111D, 111D', 111S, 111S') are formed on end parts of the first and the second drain and the end parts of the first and the second source.</p> |
