PURPOSE: A substrate processing apparatus is provided to prevent the lower side of a substrate supporter from being contaminated by suppressing the inflow of process gas from the upper side of the substrate supporter to the lower side of the substrate supporter. CONSTITUTION: A reaction chamber (100) provides a substrate processing space. A substrate supporter (300) supports a plurality of substrates in the reaction chamber. A process gas spray unit (200) sprays process gas to the substrate received in the substrate supporter. A backside gas control unit controls the spray of inert gas. A backside gas supply source (600) supplies backside gas to the inside of a ring (500) through a backside gas supply tube (610).
申请公布号
KR20130071887(A)
申请公布日期
2013.07.01
申请号
KR20110139363
申请日期
2011.12.21
申请人
WONIK IPS CO., LTD.
发明人
LEE, JUNG HWAN;LEE, SANG JIN;HWANG, HUI;YU, SEUNG KWAN;KIM, YOUNG JUN;KIM, YOUNG HYO