发明名称 |
REPLACEMENT GATE MOSFET WITH RAISED SOURCE AND DRAIN |
摘要 |
A disposable dielectric spacer is formed on sidewalls of a disposable material stack. Raised source/drain regions are formed on planar source/drain regions by selective epitaxy. The disposable dielectric spacer is removed to expose portions of a semiconductor layer between the disposable material stack and the source/drain regions including the raised source/drain regions. Dopant ions are implanted to form source/drain extension regions in the exposed portions of the semiconductor layer. A gate-level dielectric layer is deposited and planarized. The disposable material stack is removed and a gate stack including a gate dielectric and a gate electrode fill a cavity formed by removal of the disposable material stack. Optionally, an inner dielectric spacer may be formed on sidewalls of the gate-level dielectric layer within the cavity prior to formation of the gate stack to tailor a gate length of a field effect transistor.
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申请公布号 |
US2013161697(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201313772892 |
申请日期 |
2013.02.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PONOTH SHOM;HORAK DAVID V.;YANG CHIH-CHAO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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