Absorbers For High-Efficiency Thin-Film PV

摘要

Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing metal chalcogenide layers to impact the band gap and the morphology of the absorber layer.