SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

A silicon carbide substrate (30) includes: an n-type drift layer (32) having a first surface (S1) and a second surface (S2) that face each other; p-type body regions (33) disposed on the first surface (S1) of the n-type drift layer (32); and n-type emitter regions (34) disposed on the p-type body regions (33) in such a manner as to be separated from the n-type drift layer (32) by the p-type body regions (33). A gate insulating film (11) is disposed on the p-type body regions (33) in such a manner as to connect the n-type drift layer (32) and the n-type emitter regions (34). A p-type silicon collector layer (70) is directly disposed on the silicon carbide substrate (30) in such a manner as to face the second surface (S2) of the n-type drift layer (32).