ION IMPLANTATION ION SOURCE, SYSTEM, AND METHOD

摘要

PROBLEM TO BE SOLVED: To provide an ion source and a method which deserve production and in which a novel source material (especially, decaborane novel in an ion implantation process and a thermosensitive material such as hydride and dimer-containing compound) can be used, thus to attain a novel range of performance in ion implantation in commercial field of a semiconductor wafer.

SOLUTION: An ion source (1) for an ion implantation system includes: an evaporator (2) for generating process gas; an electron source (12) in which the process gas in an ionization enclosure (16) is ionized by directing an electron beam (32); a beam dump (11); an ionization chamber (5); and an extraction aperture (37) for taking out an ion beam. A control system includes a control system which allows control of energy of primary electrons so that individual vapor or gas molecules are ionized mainly by collision with the primary electrons from an electron gun.

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