SPARE LOGIC REALIZING METHOD OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE OF THE SAME

摘要

PURPOSE: A spare logic implementation method of a semiconductor memory device and a structure thereof are provided to minimize circuit design revision costs by easily changing the logic of a gate only with metal programming. CONSTITUTION: One or more conductive films for contacts(22a-22e) are formed on a power line(10) and an active region. The independent conductive films for the contacts are electrically connected to each other on the power line and the active region by performing metal programming on the conductive films for the contacts.