| 摘要 |
The present invention discloses a thin-film solar cell, which comprises an electrode layer and a semiconductor layer. The semiconductor layer comprises a P-type layer, an I-type layer and an N-type layer. The P-type layer is disposed on the electrode layer. The I-type layer comprises an I-type amorphous silicon layer and an I-type polymorphous silicon layer. The I-type amorphous silicon layer is disposed on the P-type layer. The I-type polymorphous silicon layer is disposed on the I-type amorphous silicon layer. The N-type layer is disposed on the I-type polymorphous silicon layer. Wherein, the I-type polymorphous silicon layer generates a crystalline diffraction event and reduces photolysis reaction for enhancing the conversion efficiency of the thin-film solar cell.
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